采用温控和碘吸收池技术的发射激光稳频技术

多普勒测风激光雷达通过分析系统回波信号的多普勒频移反演出风速，为提高风场探测精度，从稳频技术方面展开研究。在稳频过程中，分别采取措施消除激光频率的长期漂移和短期抖动。针对激光频率的长期漂移，设计并研制了种子激光器温控箱，通过水浴的控温方式大大减小了激光频率的长期漂移，将激光频率稳定在±50 MHz以内；针对激光频率的短期抖动，采用以碘分子吸收池为核心器件的稳频系统，通过半导体控温方式对碘分子吸收池精确控温，控温精度达0.03 ℃，提高了稳频精度，将激光频率进一步稳定在±8 MHz以内，满足±10 MHz以内的设计精度要求。通过搭建多普勒测风激光雷达系统，对发射激光稳频装置进行系统验证，连续4组风场观测结果表明:系统探测高度为17 km，绝大部分方差在4 m/s以下，满足测风激光雷达测量指标的要求。     

High-strength AlN ceramics by low-temperature sintering with CaZrO3–Y2O3 co-additives

Aluminum nitride (AlN) ceramics with the concurrent addition of CaZrO₃ and Y₂O₃ were sintered at 1450-1700 °C. The degree of densification, microstructure, flexural strength, and thermal conductivity of the resulting ceramics were evaluated with respect to their composition and sintering temperature. Specimens prepared using both additives could be sintered to almost full density at relatively low temperature (3 h at 1550 °C under nitrogen at ambient pressure); grain growth was suppressed by grain-boundary pinning, and high flexural strength over 630 MPa could be obtained. With two-step sintering process, the morphology of second phase was changed from interconnected structure to isolated structure; this two-step process limited grain growth and increased thermal conductivity. The highest thermal conductivity (156 Wm⁻¹ K⁻¹) was achieved by two-step sintering, and the ceramic showed moderate flexural strength (560 MPa).     

Effect of annealing temperature on optical and electrical properties of lead sulfide thin films

Lead sulfide (PbS) thin films with 150 nm thickness were prepared onto ultra-clean quartz substrate by the RF-sputtering deposition method. Deposited thin films of PbS were annealed at different temperatures 100 °C, 150 °C, 200 °C, 250 °C and 300 °C. X-ray diffraction pattern of thin films revealed that thin films crystallized at 150 °C. Crystalline thin films had cubic phase and rock salt structure. The average crystallite size of crystalline thin films was 22 nm, 28 nm and 29 nm for 150 °C, 200 °C and 250 °C respectively. From 150 °C to 250 °C increase in annealing temperature leads to increase in crystallite arrangement. FESEM images of thin films revealed that crystallite arrangement improved by increasing annealing temperature up to 250 °C. Increase in DC electrical conductivity by increasing temperature confirmed the semiconductor nature of crystalline thin films. Increase in dark current by increasing annealing temperature showed the effect of crystallite arrangement on carrier transport. Photosensitivity decreased by increasing annealing temperature for crystalline thin films that it was explained at the base of thermal quenching of photoconductivity and adsorption of oxygen at the surface of thin films that leads to the formation of PbO at higher temperatures.     

Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability

The starting point for describing the electrostatic operation of any semiconductor device begins with a band diagram illustrating changes in the semiconductor Fermi level and the alignment of the valence and conduction bands with other interfacing semiconductors, insulating dielectrics and metal contacts. Such diagrams are essential for understanding the behavior and reliability of any semiconductor device. For metal interconnects, the band alignment between the metal conductor and the insulating intermetal and interlayer dielectric (ILD) is equally important. However, relatively few investigations have been made. In this regard, we have investigated the band alignment at the most common interfaces present in traditional single and dual damascene low-k/Cu interconnect structures. We specifically report combined X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) measurements of the Schottky barrier present at the ILD and dielectric Cu capping layer (CCL) interfaces with the Ta(N) via/trench Cu diffusion barrier. We also report similar measurements of the valence and conduction band offsets present at the interface between a-SiN(C):H dielectric CCLs and low-k a-SiOC:H ILDs (porous and non-porous). The combined results point to metal interfaces with the CCL having the lowest interfacial barrier for electron transport. As trap and defect states in low-k dielectrics are also important to understanding low-k/Cu interconnect reliability, we additionally present combined electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) measurements to determine the chemical identity and energy level of some electrically active trap/defect states in low-k dielectrics. Combined with the photoemission derived band diagrams, the EPR/EDMR measurements point to mid-gap carbon and silicon dangling bond defects in the low-k ILD and CCL, respectively, playing a role in electronic transport in these materials. We show that in many cases the combined band and defect state diagrams can explain and predict some of the observed reliability issues reported for low-k/Cu interconnects.     

Formation of β-cylindrites under supercooled extrusion of isotactic polypropylene at low shear stress

Formation of β-cylindrites of isotactic polypropylene under various wall shear stress (σ_w), supercooled temperature of melt (T_e) and crystallization temperature (T_c) has been investigated by polarized light microscopy (PLM), wide angle X-ray diffraction (WAXD), and differential scanning calorimeter (DSC). To have better control over the thermomechanical history, instead of a reciprocating screw, the samples were prepared by extruding supercooled melt through capillary die. β-cylindrites can be observed by PLM in the extruded specimen even at a lower σ_w (0.020 MPa), and the number of β-cylindrites nuclei increases rapidly with the lowering of T_e. The nucleation density of β-cylindrites increases with the raising of wall shear stress under a given T_e of 160 °C. Furthermore, at lower supercooled temperature of melt (145 °C), the radius of β-cylindrites decreases with the increasing of σ_w, and the number of β-cylindrites nuclei almost remain invariant. At relatively higher σ_w (0.090 MPa), a saturation of β-cylindrites nuclei is observed with decreasing T_c. A modified model based on above results has been proposed to explain the effect of the original structure of quiescent supercooled melt on the formation of β-cylindrites under low shear stress.     

Heuristic search for scheduling flexible manufacturing systems using lower bound reachability matrix

For scheduling flexible manufacturing systems efficiently, we propose new heuristic functions for A^* algorithm that is based on the T-timed Petri net. In minimizing makespan, the proposed heuristic functions are usually more efficient than the previous functions in the required number of states and computation time. We prove that these heuristic functions are all admissible and one of them is more informed than that using resource cost reachability matrix. We also propose improved versions of these heuristic functions that find a first near-optimal solution faster. In addition, we modify the heuristic function of Yu, Reyes, Cang, and Lloyd (2003b) and propose an admissible version in all states. The experimental results using a random problem generator show that the proposed heuristic functions perform better as we expected.     

Isothermal and thermal cycling oxidation of hot-dip aluminide coating on flake/spheroidal graphite cast iron

Two types of cast iron, flake graphite and spheroidal graphite cast iron, with ferrite matrix and similar composition, were aluminized by hot-dipping. As-coated aluminide layer consists of the outer Al topcoat, inner Fe–Al intermetallic layer and dispersed graphite. Isothermal and thermal cycling oxidation tests of aluminized specimens have been conducted. Cast irons with aluminide coating exhibit higher oxidation resistance than without the coating. However, different graphite structure results in diverse quality of aluminide coatings. Aluminide coating on flake graphite cast iron exhibits less oxidation resistance and adhesion to the substrate.     

小视场高重频激光雷达光机系统设计、装调及性能测试

为了后期研制星载高重频激光雷达提供数据校正及仿真,设计研制了一套小视场高重频激光雷达验证系统。对该激光雷达进行详细的光机系统结构设计,利用Zemax软件模拟发射、接收与后继单元光路图。精确计算出出射光束发散角为0.106 mrad,设计新型的光束转向结构确保正入射到扩束器中。在0.4 mm小孔光阑下,接收单元视场角0.25 mrad,在系统焦平面上的小孔光阑偏心不得超过29 μm,选择高精度三维调整结构对小孔光阑精确定位。整机结构设计采用模块化设计方法,以方形框架为基准,不同单元模块安装在其不同位置,高度集成在尺寸为390 mm×390 mm×550 mm以内。对发射单元进行装校,并检测出发散角为0.11 mrad,与仿真结果相比,相对误差为4.1%;对接收与后继单元进行装校,采用平行光管出射的平行光正入射到接收望远镜,获得系统焦点精确位置,完成高精度的装校。通过对系统增益比进行标定实验,得到系统增益比为1.15,并对系统进行探测实验,探测结果:系统在夜晚气溶胶探测距离可达22 km,退偏振比可达10 km。在白天探测距离可达10 km,退偏振比可达6 km,并与太阳光度计比较,光学厚度相对误差为7.1%。整机性能满足设计要求,为后期做飞行实验打好基础。